datasheetbank_Logo
Технический паспорт Поисковая и бесплатно техническое описание Скачать
HOME  >>>  California Eastern Laboratories.  >>> NE662M04 PDF

NE662M04 Даташит - California Eastern Laboratories.

NE662M04 image

Номер в каталоге
NE662M04

Компоненты Описание

Other PDF
  no available.

PDF
DOWNLOAD     

page
11 Pages

File Size
346.2 kB

производитель
CEL
California Eastern Laboratories. 

DESCRIPTION
NECs NE662M04 is fabricated using NECs UHS0 25 GHz fT wafer process. With a typical transition frequency of 25 GHz the NE662M04 is usable in applications from 100 MHz to 10 GHz. The NE662M04 provides excellent low voltage/low current performance.
NECs new low profile/flat lead style "M04" package is ideal for todays portable wireless applications. The NE662M04 is an ideal choice for LNA and oscillator requirements in all mobile communication systems.


FEATURES
• HIGH GAIN BANDWIDTH: fT = 25 GHz
• LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz
• HIGH MAXIMUM STABLE GAIN: 20 dB at f = 2 GHz
• NEW LOW PROFILE M04 PACKAGE:
   • SOT-343 footprint, with a height of just 0.59 mm
   • Flat Lead Style for better RF performance

Page Link's: 1  2  3  4  5  6  7  8  9  10  More Pages 

Номер в каталоге
Компоненты Описание
View
производитель
NPN Silicon High-Frequency Transistor
PDF
Motorola => Freescale
NPN Silicon High-Frequency Transistor
PDF
Motorola => Freescale
NPN Silicon High-Frequency Transistor
PDF
Motorola => Freescale
NPN Silicon High-Frequency Transistor
PDF
Motorola => Freescale
NPN SILICON HIGH-FREQUENCY TRANSISTOR
PDF
Microsemi Corporation
NPN SILICON HIGH-FREQUENCY TRANSISTOR
PDF
Unspecified
NPN SILICON HIGH FREQUENCY TRANSISTOR
PDF
California Eastern Laboratories.
NPN SILICON HIGH FREQUENCY TRANSISTOR
PDF
NEC => Renesas Technology
NPN SILICON HIGH FREQUENCY TRANSISTOR ( Rev : RevA )
PDF
Advanced Semiconductor
NPN SILICON HIGH FREQUENCY TRANSISTOR
PDF
NEC => Renesas Technology

Share Link: GO URL

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]