NE38018 Даташит - NEC => Renesas Technology
производитель

NEC => Renesas Technology
FEATURES
○ Super Low noise figure & High Associated Gain
NF = 0.55 dB typ. Ga = 14.5 dB typ. OIP3 = 22 dBm (V67), OIP3 = 23 dBm (V68) typ. at f = 2 GHz
NF = 0.4 dB typ. Ga = 20 dB typ. at f = 900 MHz
4 pins super mini mold package
Wg = 800 µm
Page Link's:
1
2
3
4
5
6
7
8
9
10
More Pages
Номер в каталоге
Компоненты Описание
View
производитель
L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
NEC => Renesas Technology
X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET
NEC => Renesas Technology
L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
NEC => Renesas Technology
GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER (New Plastic Package)
California Eastern Laboratories.
GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER (New Plastic Package)
California Eastern Laboratories.
L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET
NEC => Renesas Technology
C BAND SUPER LOW NOISE HJ FET
California Eastern Laboratories.
X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
NEC => Renesas Technology
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
NEC => Renesas Technology
C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
California Eastern Laboratories.