General Description
These dual N & P-Channel Enhancement Mode Field Effect Transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. These device is particularly suited for low voltage, low current, switching, and power supply applications.

FEATUREs
• Q1 0.51 A, 60V. RDS(ON) = 2 Ω @ VGS = 10 V
                             RDS(ON) = 4 Ω @ VGS = 4.5 V
• Q2 –0.34 A, 60V. RDS(ON) = 5 Ω @ VGS = –10 V
                               RDS(ON) = 7.5Ω @ VGS = –4.5 V
• High saturation current
• High density cell design for low RDS(ON)
• Proprietary SuperSOTTM –6 package: design using copper lead frame for superior thermal and electrical capabilities