Description
   The NCE4614B uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

General Features
● N-Channel
   VDS =40V,ID =8A
   RDS(ON) < 22mΩ @ VGS=10V
   RDS(ON) < 45.5mΩ @ VGS=4.5V
● P-Channel
   VDS =-40V,ID = -7A
   RDS(ON) <32mΩ @ VGS=-10V
   RDS(ON) < 51mΩ @ VGS=-4.5V
● High power and current handing capability
● Lead free product is acquired
● Surface mount package