
STMicroelectronics
Summary description
The NAND Flash 2112 Byte/ 1056 Word Page is a family of non-volatile Flash memories that uses NAND cell technology. The devices range from 1 Gbit to 2 Gbits and operate with either a 1.8V or 3V voltage supply. The size of a Page is either 2112 Bytes (2048 + 64 spare) or 1056 Words (1024 + 32 spare) depending on whether the device has a x8 or x16 bus width.
FEATURE summary
● High Density NAND Flash memories
– Up to 2 Gbit memory array
– Up to 64Mbit spare area
– Cost effective solutions for mass
storage applications
● NAND interface
– x8 or x16 bus width
– Multiplexed Address/ Data
– Pinout compatibility for all densities
● Supply voltage
– 1.8V device: VDD = 1.7 to 1.95V
– 3.0V device: VDD = 2.7 to 3.6V
● Page size
– x8 device: (2048 + 64 spare) Bytes
– x16 device: (1024 + 32 spare) Words
● Block size
– x8 device: (128K + 4K spare) Bytes
– x16 device: (64K + 2K spare) Words
● Page Read/Program
– Random access: 25µs (max)
– Sequential access: 50ns (min)
– Page program time: 300µs (typ)
● Copy Back Program mode
– Fast page copy without external
buffering
● Cache Program and Cache Read modes
– Internal Cache Register to improve the
program and read throughputs
● Fast Block Erase
– Block erase time: 2ms (typ)
● Status Register
● Electronic Signature
● Chip Enable ‘don’t care’
– for simple interface with microcontroller
● Serial Number option
● Data protection
– Hardware and Software Block Locking
– Hardware Program/Erase locked during
Power transitions
● Data integrity
– 100,000 Program/Erase cycles
– 10 years Data Retention
■ ECOPACK® packages
■ Development tools
– Error Correction Code software and
hardware models
– Bad Blocks Management and Wear
Leveling algorithms
– File System OS Native reference
software
– Hardware simulation models