Renesas Electronics N0603N-S23-AY Даташит, N0603N-S23-AY PDF, даташитов

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N0603N-S23-AY(2020) Даташит - Renesas Electronics

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N0603N-S23-AY

Компоненты Описание

N-channel MOSFET 60 V, 100 A, 4.6 mΩ

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Renesas Electronics

Features
• Low on-state resistance : RDS (on) = 4.6 mΩ MAX. (VGS = 10 V, ID = 50 A)
• Low Ciss : Ciss = 7730 pF TYP. (VDS = 25 V, VGS = 0 V)
• High current : ID(DC) = ±100 A
• RoHS Compliant
• Quality Grade : Standard
• Applications : For high current switching

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Компоненты Описание

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N-Channel Power MOSFETs, 38 A, 60 V/100 V

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