Номер в каталоге
MTM55N10
Компоненты Описание
Other PDF
no available.
PDF
page
5 Pages
File Size
189.4 kB
производитель
Motorola => Freescale
MTM55N10 Даташит - Motorola => Freescale
Motorola => Freescale
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR
These TMOS Power FETs are designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.
• Silicon Gate for Fast Switching Speeds — Switching Times Specified at 100°C
• Designers Data — IDSS, VDS(on), VGS(th) and SOA Specified at Elevated Temperature
• Rugged — SOA is Power Dissipation Limited
• Source-to-Drain Diode Characterized for Use With Inductive Loads
Номер в каталоге
Компоненты Описание
View
производитель
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR ( Rev : V2 )
New Jersey Semiconductor
TMOS V Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate
Motorola => Freescale
TMOS V Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate
Motorola => Freescale
TMOS E-FET™ Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
Motorola => Freescale
TMOS V N-Channel Enhancement-Mode Power Field Effect Transistor DPAK for Surface
Motorola => Freescale
TMOS V N-Channel Enhancement-Mode Power Field Effect Transistor DPAK for Surface
Motorola => Freescale
Share Link: 