Description
   The MTB17A03V8 consists of two N-channel enhancement-mode MOSFETs in a DFN3×3 package, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.

FEATUREs
• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• Dynamic dv/dt rating
• Repetitive Avalanche Rated
• Pb-free lead plating and halogen-free package