
Micron Technology
GENERAL DESCRIPTION
This 64Mb SyncFlash® data sheet is divided into two major sections. The SDRAM Interface Functional Description details compatibility with the SDRAM memory, and the Flash Memory Functional Description specifies the symmetrical-sectored Flash architecture and functional commands.
FEATURES
• 125 MHz SDRAM-compatible read timing
• Fully synchronous; all signals registered on
positive edge of system clock
• Internal pipelined operation; column address can
be changed every clock cycle
• Internal banks for hiding row access
• Programmable burst lengths:
1, 2 , 4, 8, or full page (read)
1, 2, 4, or 8 (write)
• LVTTL-compatible inputs and outputs
• 3.0V–3.6V VCC, 1.65V–1.95V VCCQ
Additional VHH hardware protect mode (RP#)
• Supports CAS latency of 1, 2, and 3
• Four-bank architecture supports true concurrent
operation with zero latency
Read any bank while programming or erasing
any other bank
• Deep power-down mode: 50µA (MAX)
• Cross-compatible Flash memory command set
• Operating temperature range of -40oC to +85oC