DESCRIPTION
The MSC82307 is a common base hermetically sealed silicon NPN microwave power transistor utilizing a rugged overlay die geometry. This device is capable of withstanding 20:1 load VSWR at any phase angle under rated conditions.
The MSC82307 was designed for Class C amplifier/oscillator applications in the 1.5 - 2.3 GHz frequency range.

■ REFRACTORY/GOLD METALLIZATION
■ VSWR CAPABILITY 20:1 @ RATED CONDITIONS
■ HERMETIC STRIPAC® PACKAGE
■ POUT = 7.0 W MIN. WITH 9.6 dB GAIN