MSC81058 Даташит - STMicroelectronics
производитель

STMicroelectronics
DESCRIPTION
The MSC81058 is a common base hermetically sealed silicon NPN microwave transistor utilizing a fishbone, emitter ballasted geometry with a refractory/gold metallization system. This device is capable of withstanding infinite load VSWR at any phase angle under rated conditions.
The MSC81058 is designed for Class C amplifier applications in the 0.4 - 1.2 GHz frequency range.
■ EMITTER BALLASTED
■ REFRACTORY/GOLD METALLIZATION
■ VSWR CAPABILITY ∞:1 @ RATED CONDITIONS
■ HERMETIC STRIPAC® PACKAGE
■ POUT = 10 W MIN. WITH 10 dB GAIN @ 1 GHz
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производитель
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
STMicroelectronics
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
STMicroelectronics
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
STMicroelectronics
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
STMicroelectronics
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
STMicroelectronics
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
STMicroelectronics
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
Advanced Power Technology
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
Advanced Power Technology
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
STMicroelectronics
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
STMicroelectronics