MRF6S18060MR1 Даташит - Freescale Semiconductor
Номер в каталоге
MRF6S18060MR1
производитель

Freescale Semiconductor
Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications.
GSM Application
• Typical GSM Performance: VDD = 26 Vdc, IDQ = 600 mA, Pout = 60 Watts CW, Full Frequency Band (1805-1880 MHz or 1930-1990 MHz)
Power Gain — 15 dB
Drain Efficiency - 50%
GSM EDGE Application
• Typical GSM EDGE Performance: VDD = 26 Volts, IDQ = 450 mA, Pout = 25 Watts Avg., Full Frequency Band (1805-1880 MHz or 1930-1990 MHz)
Power Gain — 15.5 dB
Spectral Regrowth @ 400 kHz Offset = -62 dBc
Spectral Regrowth @ 600 kHz Offset = -76 dBc
EVM — 2% rms
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 1990 MHz, 60 Watts CW Output Power
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• 200°C Capable Plastic Package
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Page Link's:
1
2
3
4
5
6
7
8
9
10
More Pages
Номер в каталоге
Компоненты Описание
View
производитель
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs ( Rev : 2007 )
Freescale Semiconductor
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
Motorola => Freescale
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
Tyco Electronics
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
Freescale Semiconductor
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs ( Rev : 2006 )
Freescale Semiconductor
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
Freescale Semiconductor
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
Freescale Semiconductor
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs ( Rev : 2006 )
Freescale Semiconductor
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
Freescale Semiconductor
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
Freescale Semiconductor