MRF559 Даташит - Microsemi Corporation
производитель

Microsemi Corporation
DESCRIPTION: Designed primarily for wideband large signal stages in the UHF frequency range.
FEATUREs
• Specified @ 12.5 V, 870 MHz Characteristics
• Output Power = .5 W
• Minimum Gain = 8.0 dB
• Efficiency 50%
• Cost Effective Macro X Package
• Electroless Tin Plated Leads for Improved Solderability
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производитель
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Microsemi Corporation
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Microsemi Corporation
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Advanced Power Technology
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Microsemi Corporation
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Microsemi Corporation
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Microsemi Corporation
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Microsemi Corporation
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
New Jersey Semiconductor
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Microsemi Corporation
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Unspecified