The RF MOSFET Line RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs

Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source amplifier applications in 28 volt transmitter equipment.

• Guaranteed CW Performance at 860 MHz, 28 Volts, Narrowband Fixture
   Output Power – 60 Watts
   Power Gain – 13 dB
   Efficiency – 50%
• Typical Performance at 860 MHz, 28 Volts, Broadband Push–Pull Fixture
   Output Power – 100 Watts (PEP)
   Power Gain – 11.2 dB
   Efficiency – 40%
   IMD – –30 dBc
• Excellent Thermal Stability
• 100% Tested for Load Mismatch Stress at All Phase Angles with 5:1 VSWR @ 28 Vdc, 860 MHz, 60 Watts CW