The RF Line Microwave Pulse Power Transistor
Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters.
• Guaranteed Performance @ 1090 MHz, 50 Vdc
Output Power = 150 Watts Peak
Minimum Gain = 7.8 dB
• 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
• Industry Standard Package
• Nitride Passivated
• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration
• Internal Input Matching for Broadband Operation
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