Description
The MOC119M device has a gallium arsenide infrared emitting diode coupled to a silicon darlington phototransistor.

FEATUREs
■ High current transfer ratio of 300%
■ No base connection for improved noise immunity
■ Underwriters Laboratory (UL) recognized File #E90700
■ IEC 60747-5-2 approval available as a test option
– add option ‘V’ (e.g., MOC119VM)

APPLICATIONs
■ Appliances, measuring instruments
■ I/O interface for computers
■ Programmable controllers
■ Portable electronics
■ Interfacing and coupling systems of different potentials and impedance
■ Solid state relays