MMBD452 Даташит - Galaxy Semi-Conductor
производитель

Galaxy Semi-Conductor
FEATURES
● Very low capacitance.
● Extremely low minority carrier lifetime.
● Low reverse leakage.
● Power dissipation Pd=225mW.
APPLICATIONS
● Designed primarily for UHF and VHF detector applications.
Номер в каталоге
Компоненты Описание
View
производитель
Dual Hot-Carrier Diodes
Diode Semiconductor Korea
Dual Hot Carrier Mixer Diodes
Shenzhen Luguang Electronic Technology Co., Ltd
Dual Hot Carrier Mixer Diodes
Shenzhen Luguang Electronic Technology Co., Ltd
Dual Hot Carrier Mixer Diodes
Leshan Radio Company,Ltd
Dual Hot Carrier Mixer Diodes
Motorola => Freescale
Dual Hot Carrier Mixer Diodes ( Rev : 2017 )
Shenzhen Luguang Electronic Technology Co., Ltd
Dual Hot Carrier Mixer Diodes
Leshan Radio Company
Dual Hot Carrier Mixer Diodes
ON Semiconductor
Dual Hot-Carrier Diodes Schottky Barrier Diodes
ON Semiconductor
Dual Hot−Carrier Diodes Schottky Barrier Diodes
ON Semiconductor