MJD31C Даташит - Inchange Semiconductor
производитель

Inchange Semiconductor
DESCRIPTION
• DC Current Gain -hFE = 25(Min)@ IC= 1A
• Collector-Emitter Breakdown Voltage- : V(BR) CEO= 100V(Min)
• Complement to Type MJD32C
• DPAK for Surface Mount Applications
• Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
• Designed for use in general purpose amplifier and low speed switching applications.
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