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MJ11016 Даташит - Inchange Semiconductor

MJ11016 image

Номер в каталоге
MJ11016

Компоненты Описание

Other PDF
  no available.

PDF
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page
2 Pages

File Size
48.2 kB

производитель
Iscsemi
Inchange Semiconductor 

DESCRIPTION
• Collector-Emitter Breakdown Voltage-
   : V(BR)CEO= 120V(Min.)
• High DC Current Gain-
   : hFE= 1000(Min.)@IC= 20A
• Low Collector Saturation Voltage-
   : VCE (sat)= 3.0V(Max.)@ IC= 20A
• Complement to Type MJ11015


APPLICATIONS
• Designed for use as output devices in complementary
   general purpose amplifier applications.


Номер в каталоге
Компоненты Описание
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производитель
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Unspecified
Silicon NPN Darlington Power Transistor
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Shenzhen SPTECH Microelectronics Co., Ltd.

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