Номер в каталоге
MGFK39V4045
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MITSUBISHI ELECTRIC
DESCRIPTION
The MGFK39V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
FEATURES
Internally matched to 50(ohm) system
Flip-chip mounted
● High output power
P1dB=8W (TYP.) @f=14.0 – 14.5GHz
● High linear power gain
GLP=5.5dB (TYP.) @f=14.0 – 14.5GHz
● High power added efficiency
P.A.E.=20% (TYP.) @f=14.0 – 14.5GHz
APPLICATION
● 14.0 – 14.5 GHz band power amplifiers