DESCRIPTION
The MGF4953B super-low noise InGaAs HEMT (High Electron Mobility Transistor) is designed for use in K band amplifiers.
The lead-less ceramic package assures minimum parasitic losses.

FEATURES
   Low noise figure @ f=20GHz
      NFmin. = 0.55dB (Typ.)
   High associated gain @ f=20GHz
      Gs = 10.5dB (Typ.)

APPLICATION
   C to K band low noise amplifiers