DESCRIPTION
The MGF4910E series  super-low-noise HEMT (High Electron Mobility Transistor) is designed for use in X to K band amplifiers. The hermetically sealed metal-ceramic package assures minimum parasitic losses, and has a configuration suitable for microstrip circuits.
The MGF4910E Series is mounted in the super 12 tape, and in electrically equivalent to MGF4310E Series,

FEATURES
● Low noise figure @ f = 12GHz
   MGF4914E: NFmin. = 1.00dB (MAX)
   MGF4918E: NFmin. = 0.60dB (MAX)
   MGF4919E: NFmin. = 0.50dB (MAX)
● High associated gain Gs = 9.5dB(MIN.) @ f = 12GHz

APPLICATION
   S to X band super-low-noise amplifiers