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MGB15N40CLT4(2002) Даташит - ON Semiconductor

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MGB15N40CLT4

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Ignition IGBT 15 Amps, 410 Volts N–Channel TO–220 and D2PAK

This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over–Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.

• Ideal for Coil–On–Plug, IGBT–On–Coil, or Distributorless Ignition System Applications
• High Pulsed Current Capability up to 50 A
• Gate–Emitter ESD Protection
• Temperature Compensated Gate–Collector Voltage Clamp Limits Stress Applied to Load
• Integrated ESD Diode Protection
• Low Threshold Voltage to Interface Power Loads to Logic or Microprocessor Devices
• Low Saturation Voltage
• Optional Gate Resistor (RG)

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