Номер в каталоге
MBRD10200CT
Компоненты Описание
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SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
Features:
1) Low power loss, high efficiency, High surge capacity.
2) For use in low voltage, high frequency inverters,
Free wheeling, and polarity protection applications.
3) Metal silicon junction. Majority carrier conduction.
4) High current Capability, low forward voltage drop.
5) Guard ring for over voltage protection.