SWITCHMODE™ Dual Schottky Power Rectifier

The MBR2030CTL employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low−voltage, high−frequency switching power supplies, free wheeling diodes and polarity protection diodes.

FEATUREs
• Pb−Free Package is Available*
• Highly Stable Oxide Passivated Junction
• Very Low Forward Voltage Drop (0.4 Max @ 10 A, TC = 150°C)
• 150°C Operating Junction Temperature
• Matched Dual Die Construction (10 A per Leg or 20 A per Package)
• High Junction Temperature Capability
• High dv/dt Capability
• Excellent Ability to Withstand Reverse Avalanche Energy Transients
• Guardring for Stress Protection
• Epoxy Meets UL 94, V−0 @ 0.125 in

Mechanical Characteristics
• Case: Epoxy, Molded
• Weight: 1.9 grams (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
   Leads are Readily Solderable
• Lead Temperature for Soldering Purposes:
   260°C Max. for 10 Seconds