GENERAL DESCRIPTION
The MBM29LV008TA/BA are a 8M-bit, 3.0 V-only Flash memory organized as 1M bytes of 8 bits each. The MBM29LV008TA/BA are offered in a 40-pin TSOP(I) package. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The devices can also be reprogrammed in standard EPROM programmers.

FEATURES
• Single 3.0 V read, program, and erase
    Minimizes system level power requirements
• Compatible with JEDEC-standard commands
    Uses same software commands as E2PROMs
• Compatible with JEDEC-standard world-wide pinouts
    40-pin TSOP(I) (Package suffix: PTN – Normal Bend Type, PTR – Reversed Bend Type)
• Minimum 100,000 program/erase cycles
• High performance
    70 ns maximum access time
• Sector erase architecture
    One 16K byte, two 8K bytes, one 32K byte, and fifteen 64K bytes
    Any combination of sectors can be concurrently erased. Also supports full chip erase
• Boot Code Sector Architecture
    T = Top sector
    B = Bottom sector
• Embedded EraseTM Algorithms
    Automatically pre-programs and erases the chip or any sector
• Embedded ProgramTM Algorithms
    Automatically writes and verifies data at specified address
• Data Polling and Toggle Bit feature for detection of program or erase cycle completion
• Ready/Busy output (RY/BY)
    Hardware method for detection of program or erase cycle completion
• Automatic sleep mode
    When addresses remain stable, automatically switch themselves to low power mode
• Low VCC write inhibit ≤ 2.5 V
• Erase Suspend/Resume
    Suspends the erase operation to allow a read data in another sector within the same device
• Sector protection
    Hardware method disables any combination of sectors from program or erase operations
• Sector Protection Set function by Extended sector protection command
• Temporary sector unprotection
    Temporary sector unprotection via the RESET pin