Product Description
The MAGX-002731-100L00 is a gold metalized matched Gallium Nitride (GaN) on Silicon Carbide RF power transistor optimized for civilian and military radar pulsed applications between 2700 - 3100 MHz. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, ruggedness over a wide bandwidth for today’s demanding application needs. The MAGX-002731-100L00 is constructed using a thermally enhanced Cu/Mo/Cu flanged ceramic package which provides excellent thermal performance. High breakdown voltages allow for reliable and stable operation in extreme mismatched load conditions unparalleled with older semiconductor technologies.

FEATUREs
• GaN depletion mode HEMT microwave transistor
• Common source configuration
• Broadband Class AB operation
• Thermally enhanced Cu/Mo/Cu package
• RoHS Compliant
• +50V Typical Operation
• MTTF of 114 years (Channel Temperature < 200°C)

APPLICATION
• Civilian and Military Pulsed Radar