Номер в каталоге
M63812P
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MITSUBISHI ELECTRIC
DESCRIPTION
M63812P, M63812FP, M63812GP and M63812KP are seven-circuit Singe transistor arrays with clamping diodes.
The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.
FEATURES
● Four package configurations (P, FP, GP and KP)
● Medium breakdown voltage (BVCEO≥35V)
● Synchronizing current (IC(max) = 300mA)
● With clamping diodes
● With zener diodes
● Low output saturation voltage
● Wide operating temperature range (Ta=–40 to +85°C)
APPLICATION
Driving of digit drives of indication elements (LEDs and lamps) with small signals