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M5M410092BFP Даташит - MITSUBISHI ELECTRIC

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M5M410092BFP

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204 Pages

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811.6 kB

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Mitsubishi
MITSUBISHI ELECTRIC  

Introduction
One of the traditional bottlenecks of 3D graphics hardware has been the rate at which pixels can be rendered into a frame buffer using conventional DRAM or VRAM. The 3D-RAM emerged from a complete rethinking of frame buffer technology and produces an order of magnitude increase in rendering performance.

The factors responsible for the dramatic overall performance improvement include:
• New Memory Architecture
    • 10-Mbits DRAM array supporting 1280 x 1024 x 8 frame buffer
    • Four independent, interleaved DRAM banks
    • 2048-bit SRAM Pixel Buffer as the cache between DRAM and ALU
    • Built-in tile-oriented memory addressing for rendering and scan line-oriented memory addressing for video refresh
    • 256-bit global bus connecting DRAM banks and Pixel Buffer
    • Flexible dual Video Buffer supporting 85-Hz CRT refresh
• Write Mostly Interface
    • On-chip ALU
    • Four ROP units supporting 16 raster operations on byte data
    • Four Blend units blending the old pixel value with new information
    • On-chip hardware acceleration for all OpenGL blending modes(NEW)
    • On-chip hardware acceleration for all OpenGL stencil modes (NEW)
    • One 32-bit Match Comparator and one 32-bit Magnitude Comparator
    • Concurrent operations of DRAM, Pixel Buffer, ALU and Video Buffer
    • 32-bit synchronous high-bandwidth data bus interface with rendering controller
    • Blending operations in both (8, 8, 8, 8) and (4, 4, 4, 4) color modes (NEW)
    • One additional PASS_IN pin for flexible bit plane organization

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