DESCRIPTION
M54587P and M54587FP are eight-circuit collector-currentsynchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.

FEATURES
● High breakdown voltage (BVCEO ≥ 50V)
● High-current driving (IC(max) = 500mA)
● “L” active level input
● With input diode
● With clamping diodes
● Wide operating temperature range (Ta = –20 to +75°C)

APPLICATION
    Interfaces between microcomputers and high-voltage, high-current drive systems, drives of relays and MOS-bipolar logic IC interfaces