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LS311 Даташит - New Jersey Semiconductor
производитель

New Jersey Semiconductor
FEATURES
VERY HIGH GAIN hFE ≥ 200 @ 10µA-1mA
TIGHT VBE MATCHING |VBE1-VBE2| = 0.2mV TYP.
HIGH fT 250MHz TYP. @ 1mA
Номер в каталоге
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производитель
MONOLITHIC DUAL NPN TRANSISTOR
Micross Components
MONOLITHIC DUAL NPN TRANSISTOR
Micross Components
MONOLITHIC DUAL NPN TRANSISTOR
Micross Components
MONOLITHIC DUAL NPN TRANSISTOR
Micross Components
MONOLITHIC DUAL NPN TRANSISTOR
Micross Components
MONOLITHIC DUAL NPN TRANSISTOR
Micross Components
MONOLITHIC DUAL NPN TRANSISTOR
Micross Components
MONOLITHIC DUAL NPN TRANSISTOR
Micross Components
MONOLITHIC DUAL NPN TRANSISTOR
Micross Components
MONOLITHIC DUAL NPN TRANSISTOR
Micross Components