GaAs Infrared Light Emitting Diode

For optical control systems

FEATUREs
● High-power output, high-efficiency :PO = 8 mW (typ.)
● Emitted light spectrum suited for silicon photodetectors
● Good radiant power output linearity with respect to input current
● Wide directivity : θ = 25 deg. (typ.)
● Transparent epoxy resin package
● Long lead-wire type