DESCRIPTION
The LET9085 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET9085 is designed for high gain and broadband performance operating in common source mode at 26 V. Its internal matching makes it ideal for base station applications requiring high linearity.

N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs

• IS-95 CDMA PERFORMANCES
    POUT = 20 W
    EFF. = 28 %
• EDGE PERFORMANCES
    POUT = 35 W
    EFF. = 35 %
• GSM PERFORMANCES
    POUT = 75 W
    EFF. = 55 %
• EXCELLENT THERMAL STABILITY
• BeO FREE PACKAGE
• INTERNAL INPUT MATCHING
• ESD PROTECTION