LET9045S Даташит - STMicroelectronics
производитель

STMicroelectronics
DESCRIPTION
The LET9045S is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. LET9045S boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. LET9045S’s superior linearity performance makes it an ideal solution for base station applications.
N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• POUT = 45 W with 17 dB gain MIN @ 945 MHz / 28V
• NEW RF PLASTIC PACKAGE
• HIGH GAIN
• ESD PROTECTION
• AVAILABLE IN TAPE & REEL with TR SUFFIX
Page Link's:
1
2
3
4
5
6
7
8
9
Номер в каталоге
Компоненты Описание
View
производитель
RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
STMicroelectronics
RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
STMicroelectronics
RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
STMicroelectronics
RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package ( Rev : 2003 )
STMicroelectronics
RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
STMicroelectronics
RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
STMicroelectronics
RF POWER TRANSISTORS Ldmos Enhanced Technology
STMicroelectronics
RF POWER TRANSISTORS Ldmos Enhanced Technology
STMicroelectronics
RF POWER TRANSISTORS Ldmos Enhanced Technology
STMicroelectronics
RF POWER TRANSISTORS Ldmos Enhanced Technology
STMicroelectronics