KTB817 Даташит - Inchange Semiconductor
производитель

Inchange Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage
: V(BR)CEO= -140V(Min)
• Good Linearity of hFE
• High Current Capability
• Wide Area of Safe Operation
• Complement to Type KTD1047
• Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
• Recommend for 60W audio frequency amplifier output
stage applications
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производитель
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Shenzhen SPTECH Microelectronics Co., Ltd.
Silicon PNP Power Transistor
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