
ON Semiconductor
Description
The KAI−1010 Image Sensor is a high-resolution monochrome charge coupled device (CCD) device whose non-interlaced architecture makes it ideally suited for video, electronic still and motion/still camera applications. The device is built using an advanced true two-phase, double-polysilicon, NMOS CCD technology. The p+npn− photodetector elements eliminate image lag and reduce image smear while providing antiblooming protection and electronic-exposure control. The total chip size is 10.15 (H) mm × 10.00 (V) mm
FEATUREs
• Front Illuminated Interline Architecture
• Progressive Scan (Non-Interlaced)
• Electronic Shutter
• On-Chip Dark Reference
• Low Dark Current
• High Sensitivity Output Structure
• Anti-Blooming Protection
• Negligible Lag
• Low Smear (0.1% with Microlens)
APPLICATION
• Machine Vision