Номер в каталоге
K7N801845M
Компоненты Описание
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PDF
page
18 Pages
File Size
307.9 kB
производитель

Samsung
GENERAL DESCRIPTION
The K7N803645M and K7N801845M are 9,437,184 bits Synchronous Static SRAMs.
The NtRAMTM, or No Turnaround Random Access Memory utilizes all the bandwidth in any combination of operating cycles. Address, data inputs, and all control signals except output enable and linear burst order are synchronized to input clock.
FEATURES
• 2.5V ±5% Power Supply.
• Byte Writable Function.
• Enable clock and suspend operation.
• Single READ/WRITE control pin.
• Self-Timed Write Cycle.
• Three Chip Enable for simple depth expansion with no data contention .
• A interleaved burst or a linear burst mode.
• Asynchronous output enable control.
• Power Down mode.
• TTL-Level Three-State Outputs.
• 100-TQFP-1420A .