datasheetbank_Logo
Технический паспорт Поисковая и бесплатно техническое описание Скачать
HOME  >>>  Samsung  >>> K4X56163PG PDF

K4X56163PG Даташит - Samsung

K4X56163PG image

Номер в каталоге
K4X56163PG

Компоненты Описание

Other PDF
  no available.

PDF
DOWNLOAD     

page
23 Pages

File Size
211 kB

производитель
Samsung
Samsung 

FEATURES
• 1.8V power supply, 1.8V I/O power
• Double-data-rate architecture; two data transfers per clock cycle
• Bidirectional data strobe(DQS)
• Four banks operation
• Differential clock inputs(CK and CK)
• MRS cycle with address key programs
   - CAS Latency ( 2, 3 )
   - Burst Length ( 2, 4, 8, 16 )
   - Burst Type (Sequential & Interleave)
   - Partial Self Refresh Type ( Full, 1/2, 1/4 Array )
   - Output Driver Strength Control ( Full, 1/2, 1/4, 1/8 )
• Internal Temperature Compensated Self Refresh
• Deep Power Down Mode
• All inputs except data & DM are sampled at the positive going edge of the system clock(CK).
• Data I/O transactions on both edges of data strobe, DM for masking.
• Edge aligned data output, center aligned data input.
• No DLL; CK to DQS is not synchronized.
• LDM/UDM for write masking only.
• Auto refresh duty cycle
   - 7.8us for -25 to 85 °C

Page Link's: 1  2  3  4  5  6  7  8  9  10  More Pages 

Номер в каталоге
Компоненты Описание
View
производитель
16M x16 Mobile DDR SDRAM
PDF
Samsung
256M: 16M x16 Mobile DDR SDRAM
PDF
Emerging Memory & Logic Solutions Inc
32M x16 Mobile-DDR SDRAM
PDF
Samsung
512M : 16M x 32bit Mobile DDR SDRAM
PDF
Emerging Memory & Logic Solutions Inc
512M : 16M x 32bit Mobile DDR SDRAM
PDF
Emerging Memory & Logic Solutions Inc
Mobile DDR SDRAM
PDF
Micron Technology
256Mb: x16 MOBILE SDRAM
PDF
Micron Technology
16Mx16 Mobile DDR SDRAM
PDF
Samsung
2Gb (128M x16) NAND Flash + 1Gb (64M x16 ) Mobile DDR SDRAM
PDF
Samsung
Mobile Low-Power DDR SDRAM
PDF
Micron Technology

Share Link: GO URL

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]