HOME >>> Hitachi -> Renesas Electronics >>>
K3151 PDF
K3151 Даташит - Hitachi -> Renesas Electronics
производитель
Hitachi -> Renesas Electronics
• Low on-resistance
RDS (on)= 11.5 mΩtyp.
• High speed switching
• 4 V gate drive device can be driven from 5 V source
Page Link's:
1
2
3
4
5
6
7
8
9
Номер в каталоге
Компоненты Описание
View
производитель
Silicon N-Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon N-Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon N-Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon N-Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon N-Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon N Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon N Channel MOS FET High Speed Power Switching ( Rev : 2006 )
Renesas Electronics
Silicon N Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon N Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon N Channel MOS FET High Speed Power Switching
Renesas Electronics
