K209(1997) Даташит - Toshiba
производитель
Toshiba
AUDIO FREQUENCY LOW NOISE AMPLIFIER APPLICATIONS
• High |Yfs|
: |Yfs| = 15 mS (Typ.) at VDS = 10 V, VGS = 0
• High Breakdown Voltage: VGDS = −50 V
• Low Noise
: NF = 1.0dB (Typ.) at VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 kΩ
• High Input Impedance: IGSS = −1 nA (Max.) at VGS = −30 V
• Small Package
Номер в каталоге
Компоненты Описание
View
производитель
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type ( Rev : 1997 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type ( Rev : 2007 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE ( Rev : 1997 )
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE ( Rev : 1997 )
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE ( Rev : 1997 )
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE ( Rev : 1997 )
Toshiba
