JZDW5016 Даташит - JIEJIE MICROELECTRONICS CO.,Ltd
производитель

JIEJIE MICROELECTRONICS CO.,Ltd
Chip Features
(1) SIPOS and GPP double-layer passivation protection process
(2) Single mesa outer trench process
(3) VRRM≥ 1600V
(4) Front metal layer: AL or Ti-Ni-Ag
(5) Backside metal layer: Ti-Ni-Ag
The main purpose
(1) Rectified power supply
(2) Other rectification applications
Номер в каталоге
Компоненты Описание
View
производитель
High Voltage Rectifier Diode Chip
JIEJIE MICROELECTRONICS CO.,Ltd
High Voltage Rectifier Diode Chip
JIEJIE MICROELECTRONICS CO.,Ltd
High Voltage Rectifier Diode Chip
JIEJIE MICROELECTRONICS CO.,Ltd
High Voltage Rectifier Diode Chip
JIEJIE MICROELECTRONICS CO.,Ltd
High Voltage Rectifier Diode Chip
JIEJIE MICROELECTRONICS CO.,Ltd
High Voltage Rectifier Diode Chip
JIEJIE MICROELECTRONICS CO.,Ltd
High Voltage Rectifier Diode Chip
JIEJIE MICROELECTRONICS CO.,Ltd
High Voltage Rectifier Diode Chip
JIEJIE MICROELECTRONICS CO.,Ltd
High Voltage Rectifier Diode Chip
JIEJIE MICROELECTRONICS CO.,Ltd
High Voltage Rectifier Diode Chip
JIEJIE MICROELECTRONICS CO.,Ltd