J105GR(2003) Даташит - Toshiba
производитель
Toshiba
For Audio Amplifier, Analog Switch, Constant Current
and Impedance Converter Applications
• High breakdown voltage: VGDS = 50 V
• High input impedance: IGSS = 1.0 nA (max) (VGS = 30 V)
• Low RDS (ON): RDS (ON) = 270 Ω (typ.) (IDSS = −5 mA)
• Complimentary to 2SK330
• Small package
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производитель
TOSHIBA Field Effect Transistor Silicon P Channel Junction Type
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel Junction Type
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL JUNCTION TYPE ( Rev : 1997 )
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL JUNCTION TYPE ( Rev : 1997 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel Junction Type
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL JUNCTION TYPE ( Rev : 1997 )
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL JUNCTION TYPE ( Rev : 1997 )
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL JUNCTION TYPE ( Rev : 1997 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel Junction Type
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel Junction Type
Toshiba
