CoolMOS™ 1) Power MOSFET

Electrically isolated back surface
2500 V electrical isolation
N-Channel Enhancement Mode
Low RDSon, high VDSS MOSFET
Ultra low gate charge

FEATUREs
• Silicon chip on Direct-Copper-Bond
   substrate
   - high power dissipation
   - isolated mounting surface
   - 2500 V electrical isolation
   - low drain to tab capacitance (< 30 pF)
• Fast CoolMOS™ 1) power MOSFET 4th
   generation
   - high blocking capability
   - lowest resistance
   - avalanche rated for unclamped
      inductive switching (UIS)
   - low thermal resistance
      due to reduced chip thickness
• Enhanced total power density

APPLICATIONs
• Switched mode power supplies
   (SMPS)
• Uninterruptible power supplies (UPS)
• Power factor correction (PFC)
• Welding
• Inductive heating
• PDP and LCD adapter

Advantages
• Easy assembly:
   no screws or isolation foils required
• Space savings
• High power density
• High reliability