HiPerFET Power MOSFETs Q-Class

N-Channel Enhancement Mode
Avalanche Rated, Low Qg, High dv/dt

FEATUREs
• IXYS advanced low Qg
   process
• Low gate charge and capacitances
   - easier to drive
   - faster switching
• International standard packages
• Low RDS (on)
• Rated for unclamped Inductive load
   switching (UIS) rated
• Molding epoxies meet UL 94 V-0
   flammability classification

Advantages
• Easy to mount
• Space savings
• High power density