Features
• Ultra Low On-Resistance
- rDS(ON) = 0.016Ω, VGS = −10V
- rDS(ON) = 0.024Ω, VGS = −4.5V
- rDS(ON) = 0.027Ω, VGS = −4V
• Gate to Source Protection Diode
• Simulation Models
- Temperature Compensated PSPICE™ and SABER Electrical Models
- Spice and SABER Thermal Impedance Models
- www.intersil.com
• Peak Current vs Pulse Width Curve
• Transient Thermal Impedance Curve vs Board Mounting Area
• Switching Time vs RGS Curves
Номер в каталоге
Компоненты Описание
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производитель
10A, 30V, 0.016 Ohm, P-Channel, Logic Level, Power MOSFET
Intersil
20A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
Fairchild Semiconductor
20A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
Intersil
56A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
Intersil
56A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
Fairchild Semiconductor
10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET
Intersil
2.1A, 30V, 0.150 Ohm, P-Channel Logic Level, Power MOSFET
Intersil
11A, 30V, 0.0115 Ohm, P-Channel, Logic Level, Power MOSFET
Intersil
10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET
Fairchild Semiconductor
14A, 30V, 0.0078 Ohm, N-Channel, Logic Level, Power MOSFET
Intersil