INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

FEATUREs
• High short circuit rating optimized for motor control, tsc=10µs, VCC = 720V , TJ= 125°C, VGE= 15V
• Combines low conduction losses with high switching speed
• Tighter parameter distribution and higher efficiency than previous generations
• IGBT co-packaged with HEXFRED^TM ultrafast, ultrasoft recovery antiparallel diodes
• Lead-Free

Benefits
• Latest generation 4 IGBT's offer highest power density motor controls possible
• HEXFRED^TM diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses
• This part replaces the IRGPH50KD2 and IRGPH50MD2 products
• For hints see design tip 97003