IRG4BC30FD1PBF(2004) Даташит - International Rectifier
Номер в каталоге
IRG4BC30FD1PBF
производитель

International Rectifier
Features
• Fast: Optimized for medium operating frequencies
(1-5 kHz in hard switching, >20 kHz in resonant mode).
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• IGBT co-packaged with Hyperfast FRED diodes for ultra low
recovery characteristics.
• Industry standard TO-247AB package
• Lead-Free
Benefits
• Generation 4 IGBTs offer highest efficiencies available
• IGBTs optimized for specific application conditions
• FRED diodes optimized for performance with IGBTs.
Minimized recovery characteristics require less / no
snubbing
Номер в каталоге
Компоненты Описание
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производитель
INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE ( Rev : 2004 )
International Rectifier
Insulated Gate Bipolar Transistor with Anti-Parallel Diode
Motorola => Freescale
Insulated Gate Bipolar Transistor with Anti-Parallel Diode
Motorola => Freescale
Insulated Gate Bipolar Transistor with Anti-Parallel Diode
Motorola => Freescale
Insulated Gate Bipolar Transistor with Anti-Parallel Diode
Motorola => Freescale
Insulated Gate Bipolar Transistor with Anti-Parallel Diode
ON Semiconductor
Insulated Gate Bipolar Transistor with Anti-Parallel Diode
ON Semiconductor
Insulated Gate Bipolar Transistor
ON Semiconductor
Insulated Gate Bipolar Transistor
ON Semiconductor