IRF9140_ Даташит - Samsung
производитель

Samsung
FEATURES
• Low RDS(on)
• Improved inductive ruggedness
• Fast switching times
• Rugged polysilicon gate cell structure
• Low input capacitance
• Extended safe operating area
• Improved high temperature reliablility
Page Link's:
1
2
3
4
5
6
7
8
9
10
More Pages
Номер в каталоге
Компоненты Описание
View
производитель
P-Channel Power MOSFETs
Intersil
P-CHANNEL POWER MOSFETS
Samsung
P–CHANNEL POWER MOSFETS ( Rev : V2 )
Samsung
P-Channel Power MOSFETs
Unspecified
P-CHANNEL POWER MOSFETS
Samsung
P–CHANNEL POWER MOSFETS
Samsung
P-CHANNEL POWER MOSFETS
Samsung
P-CHANNEL POWER MOSFETS
New Jersey Semiconductor
P-CHANNEL POWER MOSFETS
Samsung
P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS
Silicon Standard Corp.