datasheetbank_Logo
Технический паспорт Поисковая и бесплатно техническое описание Скачать
HOME  >>>  Kersemi Electronic Co., Ltd.  >>> IRF3710ZL PDF

IRF3710ZL Даташит - Kersemi Electronic Co., Ltd.

IRF3710Z image

Номер в каталоге
IRF3710ZL

Компоненты Описание

Other PDF
  no available.

PDF
DOWNLOAD     

page
12 Pages

File Size
638.5 kB

производитель
KERSEMI
Kersemi Electronic Co., Ltd. 

Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.


FEATUREs
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax


Номер в каталоге
Компоненты Описание
View
производитель
POWER MOS7® MOSFET
PDF
Advanced Power Technology
HEXFET®Power MOSFET
PDF
International Rectifier
HEXFET® Power MOSFET
PDF
International Rectifier
HEXFET® Power MOSFET
PDF
International Rectifier
HEXFET® Power MOSFET
PDF
International Rectifier
HEXFET® Power MOSFET
PDF
International Rectifier
HEXFET® Power MOSFET
PDF
New Jersey Semiconductor
HEXFET® Power MOSFET
PDF
Kersemi Electronic Co., Ltd.
HEXFET® Power MOSFET
PDF
International Rectifier
HEXFET® Power MOSFET
PDF
International Rectifier

Share Link: GO URL

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]