Power MOS Field-Effect Transistors

N-Channel Enhancement-Mode
Power Field-Effect Transistors

24 A and 27 A, 60 V - 100 V rDS(0n) = 0.085Ω and 0.11Ω

FEATUREs:
■ SOA is power-dissipation limited
■ Nanosecond switching speeds
■ Linear transfer characteristics
■ High input impedance
■ Majority carrier device